场效应MOS管AK3404Y参数5.8A30V封装SOT-23-3L.pdf免费

AK3404Y AK N-Channel Enhancement Mode Power MOSFET D Description The AK3404Y uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable G for use as a load switch and PWM applications. S Genera Features Schematic diagram ● V = 30V,I = 5.8A DS D RDS(ON) 28mΩ @ VGS=10V RDS(ON) 40mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Load switch ●PWM application Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3404Y AK3404Y SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed (Note 1) IDM 20 A Maximum Power Dissipation PD