场效应MOS管AK3415Y参数-4A-20V封装SOT-23-3L.pdf免费

AK3415Y AK P-Channel Enhancement Mode Power MOSFET Description The AK3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram ● V = -20V,I =-4A DS D RDS(ON) 60mΩ @ VGS=-2.5V RDS(ON) 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3415Y AK3415Y SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25 ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID -4 A Drain Current-Pulsed (Note 1) IDM -30 A Maximum Power Dissipation PD 1.4 W Operating Junction and Storage Temperature Range TJ ,TSTG -