第5章　保护电路设计方法.pdfVIP

Chapter 5 Protection Circuit Design CONTENTS Page 1 Short circuit (overcurrent) protection ………………………… 5-2 2 Overvoltage protection ………………………… 5-6 This section explains the protection circuit design. 5-1 Chapter 5 Protection Circuit Design 1 Short circuit (overcurrent) protection 1.1 Short circuit withstand capability In the event of a short circuit, first the IGBT’s collector current will rise, once it has reached a certain level, the C-E voltage will spike. Depending on the device’s characteristics, during the short-circuit, the collector current can be kept at or below a certain level, however the IGBT will still continue to be subjected to a heavy load, that is, high voltage and high current. Therefore, this condition must be removed as soon as possible. However, the amount of time allowed between the start of a short circuit until the current is cut off, is limited by the IGBT’s short circuit withstand capability, which is determined by the amount of time, as illustrated in Fig. 5-1. The IGBT’s short circuit withstand capability is defined as the start of the short-circuit current until the module is destroyed. Therefore, when the IGBT is short-circuited, large current is need to be cut off within the short circuit withstand capability. The withstand capability depends on collector to emitter voltage VCE, gate to emitter voltage VGE and/or junction temperature Tj . In general, the lower the withstand capability get, the larger supply voltage and the higher junction temperature get. For more information on withstand capability, referred to the application manual or technical data.