第1章　构造与特征.pdfVIP

Chapter 1 Structure and Features CONTENTS Page 1 History of IGBT structure …………………………………… 1-2 2 Module structure …………………………………… 1-4 3 Circuit configuration of IGBT module …………………………………… 1-5 4 Overcurrent limiting feature …………………………………… 1-6 5 RoHS compliance …………………………………… 1-6 6 Standards for Safety : UL Certification …………………………………… 1-6 PREFACE The insulated gate bipolar transistors (IGBTs), applied to devices such as variable-speed motor drives and uninterruptible power supplies for computers, are developing rapidly in response to the increasing demand for energy saving, weight saving, and downsizing of devices in recent years. The IGBT is a switching device designed to have the high-speed switching performance and gate voltage control of a power MOSFET as well as the high-voltage / large-current handling capacity of a bipolar transistor. 1-1 Chapter 1 Structure and Features 1 History of IGBT structure The p+layer is added to the drain side of power MOSFET to produce the (n-channel) IGBT, in which n-channel is formed when the positive voltage is applied to the gate. In this element, lower resistance can be obtained at high current by using conductivity modulation of the base layer. The IGBT structure can be divided roughly into the surface gate structure and the bulk structure that constitutes the base layer. There are two types of surface