第8章 IGBT模块的并联应用.pdfVIP

  • 5
  • 0
  • 约3.81万字
  • 约 9页
  • 2021-10-13 发布于广东
  • 举报
Chapter 8 Parallel Connections CONTENTS Page 1 Current imbalance at steady state ………………………… 8-2 2 Current imbalance at switching ………………………… 8-6 3 Gate drive circuit ………………………… 8-7 4 Wiring example for parallel connections ………………………… 8-7 This chapter explains the notes when IGBT is connected in parallel. IGBTs would be connected in parallel in order to enlarge the current capability. In this case, the number of parallel-connected modules has no limitation. However you have to consider some disadvantages of noise or spike voltage increase, which are caused by longer interconnections. You have to pay attention to the following basic notes when connecting IGBT modules in parallel. 1. Suppression of current imbalance at steady states 2. Suppression of current imbalance at dynamic state of turn-on or turn-on 3. Symmetry of gate drive circuit 8-1 Chapter 8 Parallel connections 1 On-state current imbalance An on-state current imbalance may be mainly caused by the following two factors: (1) VCE(sat) distribution (2) Main circuit wiring resistance distribution 1.1 Current imbalance caused by VCE(s

文档评论(0)

1亿VIP精品文档

相关文档