SiC（碳化硅）功率元器件的理解和活用事例.pdfVIP

SiC © 2016 ROHM Semiconductor (Shanghai) Co.,Ltd. SiC( ) 1 SiC( ) 2 SiC-SBD( - ) 3 SiC-MOSFET( -MOSFET) 4 “ SiC( )” © 2016 ROHM Semiconductor (Shanghai) Co.,Ltd. P. 1 SiC( ) 1 SiC( ) - - Si -SiC -ROHM SiC -ROHM 2 SiC-SBD( - ) 3 SiC-MOSFET( -MOSFET) 4 “ SiC( )” © 2016 ROHM Semiconductor (Shanghai) Co.,Ltd. P. 2 1 SiC( ) SiC( ) • (Si) (C)1 1 Ⅳ-Ⅳ • Si C • 3inch 4H-SiC ⇒ • 2000℃ • (9.3) (10) • © 2016 ROHM Semiconductor (Shanghai) Co.,Ltd. P. 3 1 SiC( ) - Properties Si 4H-SiC GaAs GaN Crystal Structure Diamond Hexagonal Zincblende Hexagonal a=3.09, a=3.19, Lattice Constant (Å) 5.43 5.65 c=10.08 c=5.19 Band Structure Indirect Indirect Direct Direct Energy Gap : EG (eV) 1