oDrive相关参考材料-NTMFS5C628NLT1G_2018-01-12.PDF

NTMFS5C628NL Power MOSFET 60 V, 2.4 m, 150 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (T = 25°C unless otherwise noted) J 2.4 m @ 10 V Parameter Symbol Value Unit 60 V 150 A 3.3 m @ 4.5 V Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID 150 A D (5) Current RJC (Notes 1, 3) Steady TC = 100°C 110 State Power Dissipation TC = 25°C PD 110 W RJC (Note 1) TC = 100°C 56 G (4) Continuous Drain T = 25°C ID 28 A A Current RJA (Notes 1, 2, 3) T = 100°C 20 S (1,2,3) Steady A State N−CHANNEL MOSFET Powe