WAT-Basic-Introduction教学课件完整版.pptVIP

WAT Basic Introduction SummaryWhat is WAT?Why do we need WAT?What can and can’t WAT do?WAT basic concept/device/LayoutManual WAT probe (4156)QA What is WAT?WAT is abbreviation for Wafer Acceptance Test.WAT is the last process in FAB.WAT is an important process in FAB. decide whether the wafer go through an normal process, and ship to customer. Why do we need WAT?WAT can test individual device of street, not die or chip.WAT can check electric characters of individual device.WAT can monitor front process via electric characters of individual device.WAT can provide out device test data for consumer. What can and can’t WAT do? What can and can’ t WAT do?.cont Test pattern:1)Test Line/Test Key: Production monitor, located on the Scribe Line and will be destroyed after die saw. 2)Test Chip: Design Rule check/Yield monitor/Process Qualification, usually chip size, for initial process technology development.WAT basic concept/device/layout WAT basic concept/device/layout.cont WAT basic concept/device/layout.contMOS key parameters: Vt and GmIdsatIoffVBDIsubDIBLGAMMASWINGGleak, Isubmax, Isubvg, Gleak2, SUBVTSLP, Vt1, Vt2, MFAC1, MFAC2, BETA Typical WAT testkey layout Device parameter MOSPurpose: check transistor electrical character. Continuity and Spacing of Poly, MetalSpacingHighLowContinuityHigh = 1V,measureIh, R=V / ISpacing/Bridging. Step increase Voltage, Breakdown@1uA leakage current Field DeviceN+N+N-N-P-WellSpacerContMetalGateDrainSourceSimplest design of MOSRelax design ruleP+PWSourceBodyDrainGateTest PatternCross sectionCircuit SymbolContMetalLFoxPoly GateAAFoxPurpose: Check filed Isolation Gate oxide integrityODPolyLarge Area Flat PatternSmall Area Flat PatternFinger PatternEdge rich PatternGOI Yield = e -D0 AY1 / Y2 = e -D0 (A1 - A2)Gate Oxide Breakdown, Insulation (Vbd)Gate Oxide Breakdown VoltageAlways in reverse polarity as well type, V(-) on PWSweep Vg voltage, measure IgUntile | Ig | 1uA, Vg = VbdGate Oxide LeakageForce Vg = 5V, Measure Ig