2023年汽车能源基础设施白皮书.PDFVIP

APPLICATION NOTE Introduction to 1200 V SiC MOSFET Modules for On-Board Charger Applications: NVXK2KR80WDT, NVXK2TR80WDT, NVXK2TR40WDT AND90017/D Summary Module Introduction As the trend in electric vehicle On−Board Charger (OBC) Figures 1 and 2 show uni−directional and bi−directional design moves rapidly to higher power and higher switching OBC circuit topologies that are among those receiving frequency operation, the demand for SiC MOSFETs for this significant attention in the EV market. onsemi’s new line of application is also growing. Many high voltage discrete SiC transfer molded, high voltage isolated multi−chip modules MOSFETs are already in the marketplace and engineers are is introduced with three initial members of the family: designing OBC systems to take advantage of their NVXK2KR80WDT Vienna rectifier module featuring performance benefits. It is also noted that the changes in the 1200 V 80 m SiC MOSFET and SiC and Si diodes PFC topology are remarkable. Designers are adopting the mounted on Al O ceramic substrate, 2 3 Bridgeless PFC topology using the SiC MOSFET due to its NVXK2TR80WDT dual half bridge module featuring superior switching performance and small reverse recovery 1200 V 80 m SiC MOSFETs mounted on Al2O3 characteristics. Employing a SiC MOSFET module is ceramic substrate, and known to provide benefits in terms of electrical and thermal