集成光电子器件及设计 - 新型耦合器件与原理II：器件与结构.pptxVIP

第5章新型耦合器件与原理II：器件与结构集成光电子器件及设计

2Outline Structures?and?devices?for?coupling Butt‐coupling; Vertical?coupling;? Evanescent?coupling;? Mode?coupling/conversion;?

31.?Butt‐coupling Butt‐coupler?between?a?fiber?and?a?SOI?nanowire Multimode?interference?(MMI)?couplers.?

Verticaldirection(μm)Verticaldirection(μm)4Horizontaldirection(μm)标准光纤和波导在端面耦合时模式失配损耗是插入损耗的主要因素；利用光纤和波导模场的重叠积分可以得到两者耦合时的损耗；改变波导的几何尺寸，从而改变波导的模场分布，可以使波导的模场和光纤的模场达到较好的耦合。f(x,=∫∫Er(x,y)?Enor*y)dxdyff(x,f(x, ∫∫Er(x,y)?Enor*y)dxdy∫∫Enor(x,y)?Enor*y)dxdyc0= wco=500nm,hco=300nm,hcl=2μm Horizontaldirection(μm)wco=6μm,hco=6μm,Δ≈0.7%1.1?Butt‐coupler?between?a?fiber?and?a?SOI?nanowire Coupling?coefficient

5Butt‐coupling:?mode?converters Lateral?Tapers; Vertical?Tapers; Combined?vertical??lateral?taper.?Lots?of?work?has?been?done?for?III‐V?PICs!

6Lateral?TapersIEEE?JSTQE,?3(6):?1308‐1320,?1997

7Vertical?TapersIEEE?JSTQE,?3(6):?1308‐1320,?1997

8Combined?vertical??lateral?taperIEEE?JSTQE,?3(6):?1308‐1320,?1997

9Taper?fabrication?methods?based?on?dry?etching(c)?Shadow?masked??RIE.(a)?Oxide?shadow?technique.(b)?Direct?shadow?etching

10Mode?converters?in?silicon?photonics?for?the?fiber‐coupling? Dualgrating-assisteddirectionalcoupler.G.Z.Masanovic,etal.IEEProc.-Optoelectron.,152(1),2005. NTTMicrosystemIntegrationLab.IEEEJSelect.Top.Qutant.Electron.11(1),2005hLtopLbtwrHwcohcowtpxyz

Silicon?NanotaperVilsonR.?Almeida,?Roberto?R.?Panepucci,?and?Michal?Lipson,?Nanotaperfor?compact?mode?conversion,?Opt.?Lett.?28,? 11

12hwSipolymerSiO2 h=250nmw=100nm h=?350nmw=100nm h=500nmw=100nmw=50nmw=50nmw=50nmInverse?taperNarrow?tip?is?needed.

13Ultra‐low‐loss?inverted?taper?coupler?w=450?nm??15?nm?(a?thermal?oxidation?process)IL?of?each?inverted?tapercoupler：(1)?~0.36?dB?(TM);??????????????????(2)?~?0.66?dB?(TE) M.?Pu,?et?al.?Optics?Communications,?283(19):?3678–3682,?2010.?

y(μm)y(μm)y(μm)y(μm)y(μm)y(μm)Daoxin?Dai,?et?al.?JLT,?24(6):?2428‐2433,?2006.14x(μ