Ruichips-RU30L15H宏盛微优势代理68.pdfVIP

RU30L15H

P-ChannelAdvancedPowerMOSFET

MOSFET

FeaturesPinDescription

•-30V/-14.5A,

RDS(ON)=13mΩ(Typ.)@VGS=-10V

RDS(ON)=22mΩ(Typ.)@VGS=-4.5V

•SuperHighDenseCellDesign

•ReliableandRugged

•ESDProtected

SOP-8

•LeadFreeandGreenAvailable

Applications

•LoadSwitching.

•PWMApplications.

AbsoluteMaximumRatingsP-ChannelMOSFET

SymbolParameterRatingUnit

CommonRatings(T=25°CUnlessOtherwiseNoted)

A

VDSSDrain-SourceVoltage-30

V

VGSSGate-SourceVoltage±20

TJMaximumJunctionTemperature150°C

TSTGStorageTemperatureRange-55to150°C

IDiodeContinuousForwardCurrentT=25°C-14.5A

SC

MountedonLargeHeatSink

IDP300μsPulseDrainCurrentTestedT=25°CA

C-58

T=25°C-14.5

C

IDContinuous