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- 2026-03-19 发布于浙江
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IssuesinDesignofCMOSProcess
Severalelectricalanddesignconsiderationsdeterminelevel
ofdoping,maskdimensionsandjunctiondepthsinagiven
technology.
Arealisticdesignofaprocessrequiresuseofbothprocess
anddevicesimulators.Togiveageneralideaonhowthe
calculationsarenormallydone,wewilllookatdesignof
somestepsinCMOSprocess.Theformulasthatmaybeused
forimplantanddiffusionprofilecalculation,deviceequations
andsomedataaregivenhere.Otherdataandformulascanbe
foundinvarioustexts.
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