毕业设计（论文）--太阳能多晶硅锭中的夹杂分布.docVIP

太阳能多晶硅锭中的夹杂分布 摘 要 近年来，太阳电池发电受到了人们的日益重视。硅是当前用来制造太阳能电池的主要材料，目前铸造多晶硅已经成功取代直拉单晶硅而成为最主要的太阳能电池材料。深入地研究材料中杂质利于生产出高成品率的铸造多晶硅锭，降低铸造多晶硅太阳能电池的制造成本，同时也是制备高效率铸造多晶硅太阳能电池的前提。 本文对多晶硅锭中的夹杂及其在锭中的分布作了深入的研究。多晶硅锭中经常出现硬质夹杂颗粒，严重影响线切割硅片的表面质量，严重时造成硅片切割生产中断线。我们采用光学显微镜、扫描电镜一特征X射线能谱仪、X射线衍射仪等手段对定向凝固多晶硅锭中的夹杂进行了分析。采用溶解硅基体后沉淀萃取的方法取得硅锭不同部位的夹杂。分析结果表明，硅锭中夹杂的物相是β-Si3N4，呈平直杆状。硅锭的顶表面附近夹杂高度富集,硅锭表面以下10mm几乎不存在。 关键词：多晶硅；夹杂；氮化硅；分布 The Distribution in the Multi-crystalline Silicon Ingot ABSTRACT In recent years．it was becoming more end more important to utilize solar energy through solar cells．Silicon is the presently the dominant materials for fabricating solar cells．Currently, cast multi—crystalline silicon has replaced mono-crystalline silicon as main photovoltaic materials．Understanding the properties of these impurities of mc-Si materials could help us find the way to reduce the cost of mc-Si solar cells end produce high quality mc-Si ingots． In this thesis work，the phases and the distributions of inclusions of the mc—Si ingot have been embedded studied．The inclusion particles severely affect surface quality from multi-crystalline silicon wafers，and threaten the wire curing process of the wafer production from multi-crystalline silicon ingot. Because they may cause wire broken in the cutting processes. Scanning electron microscope associated with energy spectrometer for characteristic X-ray，3D digital microscope end X-ray diffraction have been used to analyze the inclusions in a directionally solidified multi-crystalline silicon ingot．The inclusions were collected by dissolving silicon samples from different positions of the silicon ingot end extracting the un-dissolved precipitations．The results show that，the inclusion is β-Si3N4，the Si3N4 inclusions appear as straight rods．The inclusion are highly concentrated in the top layers of the ingot，rarely seen in 10 mm below surface． KEY WORDS：crystalline Silicon；nclusion；Si3N4；istribution 目 录 第一章 绪论 1 §1.1 多晶硅太阳能电池综述 1 §1.1.1 国内多晶硅太阳能电池发展概述 2 §1.1.2 国外多晶硅太阳能电