半导体光放大器超快相位特性的理论分析.docVIP

  半导体光放大器超快相位特性的理论分析# 陈立功，徐天翔，张尚剑，郑秀，刘永** （电子科技大学光电信息学院，成都 610054） 5 10 摘要：本文针对目前对于半导体光放大器中的超快相位特性缺乏深入的理论分析，相关的物 理机制还不清楚的现状,采用数值方式对半导体光放大器中的超快相位特性进行了详细的理 论分析与解释。通过分析载流子加热、光谱烧孔等带内超快物理效应与载流子消耗等带间效 应对相位贡献的物理机制的不同，并考虑到脉冲能量在相位响应中的作用，研究了半导体光 放大器的相位响应特性。在分析相位响应特性的基础上，文中进一步解释了相位响应与增益 响应存在时间延迟的原因，分析结果与已报道的实验测量结果相吻合。本文的理论分析结果 能够为超快光信号处理，如光波长、全光逻辑、光波长转换、光分插复用等提供理论指导。 关键词：光信号处理；非线性光学；带内物理效应；带间物理效应；非线性相移；半导体光 放大器 中图分类号：《TN929.11》 15 Theoretical analysis on ultra-fast phase dynamics in semi-conductor optical amplifiers CHEN Ligong, XU Tianxiang, ZHANG Shangjian, ZHENG Xiu, LIU Yong (School of Optoelectronic Information, University of Electronic Science technology of China, 20 25 30 Chengdu 610054) Abstract: We present the theoretical analysis results on the ultra-fast phase dynamics in semiconductor optical amplifiers. In particular, we focus on the ultra-fast phase dynamics which currently does not have adequate in-depth theoretical analysis and clear physical mechanism explanation. In this paper we build up a numerical model to analyze the ultra-fast phase dynamics of semiconductor optical amplifiers in details. To investigate the phase response characteristics, we analyze the different contributions to the phase shift, including intra-band effects such as carrier heating, spectral hole burning, and inter-band effects such as carrier depletion. In addition, the impact of the pulses energy on phase shift is also investigated. Based on the analysis of phase response characteristics, we further explain the reason why a delay occurs between gain response and phase response. The analysis results are in good agreement with the reported experimental results. The results presented in this paper is very useful for the SOA-based ultra-fast optical signal processing, such as optical switch, optical logic gates, optical Add/Drop Multiplexer, etc. Key words: Optical signal processing; nonlinear optics; intra-band physical effects; inter-band physical effects; phase dynamics; semico