AlGaNGaNHEMTs表面钝化抑制电流崩塌的机理研究.pdfVIP

2008 2 ( ) Feb. 2008 35 1 J OUR NAL OF XIDIAN UNIV ER SITY Vol. 35 o. 1 A lGaN /GaN HEMT s 岳远征, 郝 跃, 张进城, 冯 倩 ( 西安电子科技大学 微电子学院, 陕西 西安 710071) : 通过实验测量对AlGa / Ga HEMT 表面钝化抑制电流崩塌的机理进行 深入研究. AlGa / Ga HEMT Si3 4 钝化层使用PECVD 获得.文章综合考虑 钝化前后器件输出特性及泄漏电流的变 化, 钝化后直流电流崩塌明显减少, 仍然存在小的崩塌是由于Ga 缓冲层中的陷阱对电子的捕获. 传输 线模型测量表明, 钝化后电流的增加是由于钝化消除 表面态密度进而增加 沟道载流子密度. : 高电子迁移率晶体管; 钝化; 电流崩塌 :T 386 :A : 2008 Mechanism study of the surface passivation effect on current collapse characteristics of AlGaN/ GaN HEMTs Y UE Yuanz he ng , H A O Yue, ZH A N G J i nche ng , FEN G Qi an ( School of Microelectronic, Xidian Univ., Xian 710071, China) Abstract: The effects of surface passivation on AlGa / Ga highelectronmobility transistors ( HEM Ts) have been investigated. T he surface passivation layer of Si3 4 is deposited by plasma enhanced chemical vapor deposition ( PECVD) . The currentvoltage and gatedrain diode characteristics of AlGa / Ga HEM Ts before and after passivation are analyzed. The current collapse under DC sweep has been significantly decreased after passivation and the existence of small dispersion of drain current is due to traps in the Ga buffer. The drain current increases after passivation, because surface passivation reduces the surface state density and so increases the sheet carrier density shown in T ransmission Linear Model (T LM ) measurement. Key Words: high electron mobility transistors;passivation; current collapse The AlGa / Ga material system for high power app