電界誘起磁化スイッチング素子の作製と評価に関する研究.pdfVIP

The Murata Science Foundation 電界誘起磁化スイッチング素子の作製と評価に関する研究 Fabrication and Characterization of Electric-Field-Induced Magnetization Switching Device A01145 代表研究者 千　葉　大　地 京都大学　化学研究所　准教授 Daichi Chiba Associate Professor, Research Institute of Chemical Research, Kyoto University Electrical control of magnetism adds a new dimension to the future spin based information processing methods. A use of not electric current but of electric field is expected to realize ultra low power driving devices. We have demonstrated the room-temperature electrical control of the ferromagnetic phase transition in cobalt, a representative of the transition-metal ferromagnet family. Solid-state field effect devices, consisting of an ultra-thin cobalt film covered by a dielectric layer and a gate-electrode on top of that, were fabricated. We found that the ferromagnetic state of the film could be turned on and off isothermally and reversed simply by applying an electric field between the cobalt layer and the gate electrode at room temperature. The shift of the Curie temperature was found to be up to 100 K by applying electric fields. The result is a significant development for future low-power magnetic devices. For example, it could be used for building a field-effect magnet; where the magnet can be easily switched-off to become a non-magnet electrically, and for building a non-dissipative magnetic force generator without an electric current. 研究目的 MRAM