再结晶碳化硅(R-SiC)材料在1300℃下抗氧化性能的研究.pdfVIP

R20 再结晶碳化硅（R-SiC ）材料在 1300℃下抗氧化性能的研究 谢文 肖汉宁* 高朋召 郭文明 （湖南大学材料科学与工程学院，湖南长沙 410082） 摘 要：通过氧化过程中的质量变化研究了 R-SiC 材料在 1300℃下的氧化行为。结果 表明：最初材料的氧化使碳化硅表面形成致密的无定形 SiO2 薄层，有效地阻挡了氧的 向内扩散，此时 SiC 具有很好的抗氧化性能，其氧化反应速率遵循抛物线规律： 2 ， X Bt+b 为扩散控制反应，氧穿过氧化层的快慢直接影响氧化反应的速度。随着反应的不断进行， 氧化反应继续增厚，这时由于材料表面的氧化层与基体热膨胀系数不匹配，温度变化时 产生的热应力导致氧化层开裂，另外，R-SiC 表面的无定形二氧化硅在热循环过程中析 晶出方石英，析晶的体积效应和晶界的加入也引起开裂，从而为氧扩散提供了通道，大 大加速了 R-SiC 的氧化速率。 关键词：再结晶碳化硅，抗氧化，扩散，开裂 A Study on the oxidation resistance of Re-crystal silicon carbide （R-SiC ） at 1300℃ XIE Wen, XIAO Han-ning, GAO Peng-zhao, GUO Wen-ming （College of Materials Science and Engineering, Hunan University, Changsha 410082, China) Abstract: According to the weight gain, oxidation at 1300℃ in air of recrystallized silicon carbide(R-SiC) was investigated. The results show that the R-SiC represent excellent oxidation resistance at first, because a dense amorphous silica coating has formed on the surface of R-SiC, which acted as an obstacle to diffusion of oxygen. The weight gain of R-SiC is in a parabolic relationship with oxidation time: X 2 Bt+b . Obviously, the reaction is controlled by the diffusion rate of oxygen through the silica coating. Then the coating becomes thicker. The formation of crack on the surface of samples at the later stage was due to the thermal expansion coefficient mismatch of amorphous silica and silicon carbide. The cracks apply pass way for oxygen, and crack growth may lead to the basal body’s fracture. Besides, the amorphous silica transformed to cristobalite, the volume effect of crystallization also produced crack. Keywords: Re-crystal silicon carbide, oxi