A New Route to Study the Elastic Strain of ZnO Epilayer Grown on Sapphire.docVIP

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A New Route to Study the Elastic Strain of ZnO Epilayer Grown on Sapphire.doc

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A New Route to Study the Elastic Strain of ZnO Epilayer Grown on Sapphire.doc

A New Route to Study the Elastic Strain of ZnO Epilayer Grown on Sapphire Zhenxing Feng Grade 2000, Department of Technical Physics, School of Physics Abstract Good crystalline quality ZnO layer, 9.7%, was grown on sapphire (Al2O3) substrate by metalorganic chemical vapor deposition (MOCVD). By using Rutherford backscattering (RBS)/channeling, the tetragonal distortion (eT) was determined. With the help of high resolution x-ray diffraction (XRD), not only the results of RBS/channeling were affirmed, but also the average perpendicular and parallel elastic strains can be calculated to be 0.08% and –0.27% respectively. 1.Introduction ZnO is one of the wurtzite group Ⅱ-Ⅵ semiconductors, which have the similar properties to GaN [1]. ZnO, in the new century, gradually becomes the new focus in material research because it has a large direct band gap (Eg=3.3eV, while Eg=3.4eV for GaN [1]) at room temperature (RT), a high exciton binding energy (Eb=60meV, while Eb=28meV for GaN [2]) and a direct transition character. In addition, Zinc oxide has melting temperature as high as 2248K. The strength of Zn-to-O bond is larger than that of Ga-to-N. It is these excellent properties that make ZnO a good candidate material for optical devices, such as blue LED’s, and semiconductor devices besides widely used GaN[3]. In this paper, the ZnO epilayer was grown on sapphire (Al2O3) substrate by metalorganic chemical vapor deposition (MOCVD). Sapphire has the same crystal structure, wurtzite, as that of ZnO. But the lattice constants of sapphire (α-Al2O3) (a=b=0.4758nm,c=1.2991nm[1]) are different from those of ZnO (a=b=0.3249nm,c=0.5206nm[1]). So there are, inevitably, mismatches in ZnO epilayers grown on sapphire. On the base of such theory, by combining Rutherford backscattering (RBS)/channeling with x-ray diffraction (XRD), the tetragonal distortion eT, which is caused by the elastic strain in the epilayers, is studied. 2.Experiments ZnO epilayer was provided by Nanchang Univers