第二章 信息传输材料与技术-光调制.pdf

信息传输材料与技术 －光调制 /~soft/光电子材料导论 Schematic diagram of the eight-channel, dense wavelength-division multiplexing 80 Gbps system Direct modulation and External modulation 直接调制和外调制 Direct modulation  LED  Semiconductor Laser F-P, DFB, DBR, MQW External modulation  LN M-Z  EAM Direct modulation Population-inversion condition E - E E - E E fc fv 2 1 g E E fc , fv Fermi Levers of conduction band and valence band, E g Bandgap Any semiconductor with direct bandgap can be use to make a p-n homojunction, emitting light through spontaneous emission Heterostructure device the lattice constant of two materials should match better than 0.1% GaAs, Al Ga As x 1-x Eg(x)=1.424+1.247x (0x0.45 ) InP, In Ga As P x/y=0.45 1-x x y 1-y Eg(y)=1.35 - 0.72y + 0.12y2 LED (Light Emitting Diodes) A forward-biased p-n juntion emits light through spontaneous emission Spectral width 30-60 nm Modulation response f =√3(2πτ )-1 3dB c LN modulator  Physical phenomena and history  LN modulator used for optical communications: a. Intensity modulator b. Phase modulator c. Polarization modulator (polarization scrambler)  Intensity modulator is most often used, but phase modulator also has the same physical phenomenon. Basic physical phenomenon used for modulator is electro-optic effect.“  occurs when voltage (electric field) is given to a medium, refractive index of medium changes.  the change of refractive index is converted to phase-change light that passes through the medium.  LiNbO3 crystal (LN crystal) is used as the medium (material)