AVX固体钽电容漏电流分析.docVIP

ANALYSIS OF SOLID TANTALUM CAPACITOR LEAKAGE CURRENT 固体钽电容漏电流分析 The leakage current of a solid tantalum capacitor is the sum of several independent factors. From measurements of leakage over a range of test conditions some degree of separation of these components of the current can be achieved and so the relative importance of factors leading to high leakage can be assessed. 固体钽电容的漏电流是几个独立因素的总和， 在一定测试条件范围内对漏电流可以得到某种程度的分开的量值，所以，可以对导致漏电流大的重要因素进行评估。 There is a background level present equivalent to a dielectric resistivity of about 1016 ohm cm. This background is directly related to dielectric absorption and it contributes to the loss factor of the capacitor. It is not a true leakage insofar as it can be recovered when the capacitor is discharged. It is proportional to voltage and, over the period usually employed for leakage current measurements, is inversely proportional to time. 这里有一个大约为1016Ωcm介质电阻率的参考背景。此背景直接与介质吸收相联系，并对电容器的损耗因子有贡献。它并不是真正意义上的漏电流，因为在电容器放电时可以恢复。它与电压成正比，并在测量漏电流期间与时间成反比。 On top of this absorption current there are other components, most of which are essentially by-passing the bulk of the dielectric. These can be moisture or manganese dioxide tracks or breakdown sites in the dielectric layer. The dependence of these on the measuring voltage ranges from ohmic to an extreme sensitivity. Moisture tracks can be identified by their behavior at high and low temperatures. Leakage at breakdown sites usually exhibit a strong dependence on voltage. On the other hand manganese dioxide tracks are normally ohmic. 在吸收电流的最大值中，存在其它的成分，绝大多数情况下主要是电介质体的旁路电流。这些情况可能是潮气或二氧化锰轨迹或介质层有穿破点。这决定于测量电压，范围从欧姆级到极端敏感的值。潮湿的原因可以通过在高低温时，电容器的行为特性鉴别出来。介质层有穿破点发生的漏电流很大程度上地决定于电压。另一方面二氧化锰轨道一般为欧姆级的电流。 Some typical behavior patterns are described in detail. 下面会详细介绍一些漏电流典型的表现模式。 Introduction 简介 The leakage current of a solid tantalum capacitor is normally expressed as a single value measured at room temperature, at rated voltage, and after 3 or 5 minutes. This value is classed as high or low in com