Electronic activity of SiC precipitates in multicrystalline solar silicon外文翻译.pdfVIP

phys. stat. sol. (a) 204, No. 7, 2190–2195 (2007) / DOI 10.1002/pssa.200675436 Electronic activity of SiC precipitates in multicrystalline solar silicon *, 1 1 2 Jan Bauer , Otwin Breitenstein , and Jean-Patrice Rakotoniaina 1 Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany 2 Q-Cells AG, Guardianstraße 16, 06766 Thalheim, Germany Received 17 September 2006, revised 23 April 2007, accepted 24 April 2007 Published online 3 July 2007 PACS 72.80.Jc, 73.40.Lq, 84.60.Jt In the upper part of block-cast multicrystalline silicon one often finds silicon carbide and silicon nitride precipitates and inclusions. These contaminants can cause severe ohmic shunts in solar cells and thus de- crease the efficiency of the solar cells very strongly. It is well known that the silicon carbide precipitates cause the ohmic shunts. However, the electrical properties of the silicon carbide was unknown so far. To study the electrical properties of these silicon carbide particles we isolated them from the silicon bulk ma- terial and performed different electrical measurements on them. The measurements show that the silicon carbide precipitates are highly conductive. An investigation of the heterojunction silicon–silicon carbide was also performed and a simulation of this heterojunction leads to a new model of the ohmic shunt mechanism. It is concluded that the shunt current flows inside of the filaments. © 2007 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim 1 Introduction The efficiency of mult