《提高太阳能电池转换效率的技术探讨》 杜邦.ppt

DuPont Fire-through LBSF Process Texturing Diffusion PSG removal Front side ARC BS Al2O3/SiO2passivation BS SiNxpassivation BS via openingLaser / Etching paste BS Tab Ag paste BS Al paste FS Ag paste Co-Firing Conventionali-PERC LBSF process Texturing Diffusion PSG removal Front side ARC BS Al2O3/SiO2passivation BS SiNxpassivation BS Seed paste BS Tab Ag paste BS Al paste FS Ag paste Co-Firing DuPont FT LBSF process Texturing Diffusion PSG removal Front side ARC BS Al2O3/SiO2passivation BS SiNxpassivation BS Tab/Seed Ag paste BS Al paste FS Ag paste Co-Firing FutureFT LBSF process Replace via opening process with fire-through seed Combine seed and tab function into one BS Ag paste * Fire-through LBSF Metallization 1. Both sides passivated wafer 2. Print seed paste for local back side contact 3. Print BS-Al, BS-Tab and FS-Ag 4. Co-fire all electrodes Seed paste and Al paste overlap area fire-through BS passivation. Form local electrical contact. * Fire-through LBSF Performance Lab data shows this fire through approach is able to achieve similar efficiency to Laser iPERC process. Process optimization and performance verification ongoing at Beta-site customers * N-cell Status and Challenges * Rear n-contact (Ag) Front p-contact (Ag/Al) Rear passivation Front passivation p+-Si (B-doped emitter) n-Si (base) n+-Si (P-doped BSF) Advantages of n-type silicon More tolerant to common metal impurities (e.g. Fe has larger capture cross section for electrons, minority carrier of p-Si) Free from light induced degradation (LID) induced by boron-oxygen complexes observed in p-type (boron doped) silicon Potentially gives longer carrier lifetime (longer minority carrier diffusion length) Bifaciality Bifacial structure offers additional benefit of receiving light from the rear side; +20-30% gain in module power output demonstrated in the outdoor testing N-type Cells - Advantages * Current status A few manufacturers in mass production