《Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter-wave and terahertz frequencies》.pdf

Vo1．35，No．8 JournaJofSemiconductors Auoust2O14 Large-signalcharacterizationsofDDR IM PATT devicesbasedongroup ⅡI—V semiconductorsatmillimeter-waveandterahertzfrequencies AritraAcharyya ，AlivaM allik2， DebopriyaBanerjee2，SumanGanguli2，ArindamDas2， SudeeptoDasgupta2 ． andJ．PBanerjee 1InstituteofRadioPhysicsandElectronicsUniversityofCalcutta，92，APC Road，Kolkata700009，India ， 2SupremeKnowledgeFoundationGroupofInstitutionsMankundu，Hooghly,W estBengal712139，India ， Abstract：Large-signalfL．S)characterizationsofdouble．dr[ftregion(DDR)impactavalanchetransittimefIM． PATT)devicesbasedongroupIII—_Vsemiconductorssuchaswurtzite(Wz)GaN，GaAsandInPhavebeencarried outatbothmillimeter-wave(mm—wave)andterahertz(THz1rfequencybands．AL—Ssimulationtechniquebased onanon-sinusoida1voltageexcitation(NSVE)modeldevelopedbytheauthorshasbeenusedtoobtainthehigh rfequencypropertiesoftheabovementioneddevices．Theeriectofband—to—bandtunnelingofftheL．Spropertiesof thedeviceatdilyerentmm．waveandTHzrfequenciesarealsoinvestigated．Similarstudiesarealsocarriedoutfor DDRIMPATTsbasedonthemostpopularsemiconductormateria1．i．e．Si．forthesakeofcomparison．A compara． tivestudyofthedevicesbasedonconventionalsemiconductormaterialsfi．e．GaAs．InPandSi)withthosebasedon Wz-GaN showssignificantlybetterperformancecapabilitiesofthelatteratbothmm—waveandTHzrfequencies． Keywords：DDR IMPATTs；GaN；group III—V：large—signalsimulation；millimeter-wave；terahertzregime； wurtzite DoI：10．1088／1674—4926／35／8／084003 EEACC：2520