Thermal and Electronic Transport Properties of p-Type ZnSb英文教材.pdfVIP

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Thermal and Electronic Transport Properties of p-Type ZnSb英文教材.pdf

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P H YSI CAL REVIEW VOLUME 141, NUMBER 2 JANUARY 1966 Theriixal and Electronic Transport Properties of p-Type ZnSb* P. J. SHAvzntt ANn JonN BLAnr Departmerst of Electrical Ersgirteerirsg, Massachsssetts lrsstitsste of Technology, Cambridge, Massachusetts (Received 27 July 1965) Galvanomagnetic, thermoelectric, and thermal-conductivity measurements were made on single-crystal specimens of p-type ZnSb, which has the orthorhombic symmetry D2p. A horizontal zone-recrystallization process with an antimony-rich molten zone was used to produce the single crystals. Copper doping was used to control the hole concentration. Methods are described for making electrical and thermal contacts to this material. The experimental measurements included electrical resistivity and Hall effect (77.3 to 325K) and extensive magnetoresistance measurements at 77.3K. Measurements of thermoelectric power and thermal conductivity were made along the principal axes of oriented single-crystal cubes at OC. Con- that =1. =2.5 siderable anisotropy was measured in the electrical conductivity. It was found a, 5 0 0~, approximately. The Hall effect and the thermoelectric power a were found to be isotropic. A slight (12/o) anisotropy was measure