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(October2010)oftheKnowledgeMatrix-SAEInternational.xls
links
def
abbrev
knowledge matrix
Introduction
- to guide PCB, BGA substrate design layout; Use of underfill- material properties of solder and UBM
- control reflow temperature profile
- PCB BGA substrate design layout rules (FEM simulation)
- use of underfill
- package and board warpage
JESD22-B111
IPC / JC 9701
IPC / JC 9703
IPC / JC 9701
capacitor
transistor array
mobile ions
GOX hard BD
comments
G short
IG leak
QBD, step V
GOX soft BD
charge loss
contact spiking
could result in hard break down
barrier density
local temperature increase
etch performance failure
increased leakage current
Vth
JESD90
JESD92
capacitor structures
JESD87
HAST
Contact array
weak comp , spec violation
use SOA results from simulator
via-line resistance
do FEM simulation
Abbreviations
TDDB
TC
TS
HTOL
Econst
Eramp
Vconst
QBD
HCS
HTS
HTB
AC
Temperature Cycling
High Temperature Operating Life Test
Constant Field Stress
Ramped Field Stress
Constant Voltage Stress
Charge to Breakdown
Hot Carrier Stress
High Temperature Storage
High Temperature Bias
Autoclave (RH=100%, T=121°C)
Time Dependant Dielectric Breakdown
Material
TVS
Triangular Voltage Sweep
no
via resistance
Via chain or Kelvin via structure
redundant vias
SiO2
JESD28
JESD60
SOG
large area defect density structure
PCM
Ileak
temp simulation
High k dielectrics
percolation model
n.a.
extrinsic
PAT
ECC
SILC
bit flip or retention fails
Vth cell
cell array
Part Average Testing
Stress induced leakage current
Temperature Shock
EM (constant current, constant temperature stress)
VD/VG-stress drain or gate stress
EM
resistance increase
V-stress,
IDDQ
program/erase cycling induced SILC
charge detrapping
poly Si NVM
ONO NVM
NROM charge detrapping
Cu
no generic model
local temperature increase
Al / Si w barrier
Al-alloy w/o barrier
Si Al diffusion (Arrhenius)
DFMEA
comb serpentine
assembly/
package
functional fail
electrical test
product
leakage current
PTC
mechanical stress
(compression)
package
CM
PC
product /
daisy chain
HTSL
Arrhenius
HTSL
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