纳米尺度多栅场应管物理特性及模型研究.pdfVIP

A b stra c t A b stra c t A t present, S em iconductor Industry is undergo ing a huge revolution . Sem iconductor devices are no longer restricted to the conventional planar structure. Instead, new three-dim ensional structures are draw ing m ore and m ore attention from both academ ic and industrial areas. T he em ergence and application of D ouble-G ate, Surrounding-G are M O SFE T ，and F inFE T enab le the feature length continue to shrink. A t the sam e tim e, the com b ination of n ew dev ice structures and new m aterials are bringing m ore challenges to the process. A s the resu lt of the above tw o obv ious reasons, quantum m echanical effects m ust be taken in to accoun t w h en w e eatab lish th e m odel. T h is th esis focu ses on the m odeling of nanotransistor and the effects of the dev ices brought by physical param eters, and the new issues caused b y dev ice scaling dow n . F irst of all, w e estab lish potential and threshold voltage m odels for D ouble/ Surrounding-gate S B M O SF E T . T he Q uantum m echanical effect and Schottky barrier low ering effect are included in the threshold vo ltage m odel. A ll of these w ill b e helpfu l to the developm ent of V SL I in the future. D ue to the threshold voltage is one of the m ost im portant param eters of devices, w e develop the doub le gate and surrounding gate dev ice m odels, respectively. A s the devices scale to nanom eter scale, only a few dopants w ill result in a doping density to as high as 1018 cm 3, and unintentional im purities can be inevitable in the fabrication process. Further m ore, current-V oltage curve of the SB dopant segeragtion M O SFE T is system atically analysed for perform ance im provem ent. C om paring w ith SB devices, SB D S devices exhib its a m uch better/⑶//。# and subthreshold characteristics. T hen w e s