英文写作总结研讨.docxVIP

1. energy separation （energy difference）between the quantum dot (QD) ground and first-excited states 能量间隔 2. Analysis by Transmission Electron Microscopy (TEM) has identified 分析 3. Whilst同时 4. Stacking Fault s (SF) and threading dislocations (TD) are often associated with the large lattice mismatch in most III – V semiconductor films.与…有关 5. the GaAs barrier layer was divided in two parts分割 6. a characteristic v-shape gliding有…特征 7. The presence of these SFs is observed to create surface QDs被认为是 8. Areas区域 9. extending to延伸至 10. In contrast to与…对比 11. we would suggest this could be related to我们认为 12. dislocations occurring at the microscopic level 出现在 13. migrate away from迁移开 14. spectral response 光谱响应 15. in terms of根据，与…有关 16. composition，content组分 17. attracting strong interest引起兴趣 18. aspects such as许多方面例如 19. As previously reported正如以前报道的 20. The emission wavelength of the QDs red-shifted by 300 nm红移了300nm 21. As the composition is increased, there is an increase in density and size随着…增加什么增加 22. the reduction of PL intensity for larger compositions occurs as a result of threading dislocations being formed 23. suppressed by压制，抑制 24. epilayer外延层 25. variation变化 26. interrupted growth method间断生长 27. ion (Ar+) laser with 514.53 nm氩离子激光波长 28. it can be seen that从…可以看出 29. reveal a strong quantum localization effect展示 30. Such a blue shift in EL wavelength could be attributed to the band-filling effect of localized energy states蓝移，归咎于，能带填充效应 31. A blueshift of 3 and 1.7 cm?1 蓝移 32. Incorporating结合 33. 1.3–1.6mm has been achieved for InAs/GaAs QDs by实现 34. are limited by性能局限于 35. received little attention to date现在已经没人关注 36. spacer layer隔离层 37. the initial 15 nm of the GaAs SPL was deposited at 5101C, following which the temperature was increased to 580 1 C for the remainder of the GaAs SPL随后 38. thermal escape热逃逸 39. QD ensembles量子点群 40. the value of E E值 41. are dramatically reduced巨大的 42. takes place发生，出现 43. QD PL band caused by PL图，引起 44. are taken into account