3.2s 红外椭圆偏振测试技术.ppt

* * * * * * * Arsen doped Silicon wafers Drude Model: Plasma frequency: 1746 cm-1 Damping:359 cm-1 Carrier concentration: 8.8 x 10+18 / cm3 Mobility 100 cm2/Vs Carrier concentration and profile Si substrate Epi-Silicon Interface Carrier concentration and profile P - Dotierungsprofils in Si solar cells Carrier concentration and profile Sample 1 Sample 2 The IR ellipsometry is a powerful analysis method. It is especially suited for thin organic and inorganic films. There are applications in quite different fields. The combination of ellipsometer optics with commercial FT-IR is a big benefit of SENDIRA because there are a lot of FT-IR instruments used for material analysis. The markets are institutes for material research, chemistry, and biotechnology as well as manufacturer of IR devices and optics Summary * * * * * * * * * * * * * * * * * * * * * * * * * * * * SENDIRA Infrared Spectroscopic Ellipsometer Basics The ellipsometer measures in reflection mode the optical response of a sample using polarized light. The sample properties change the polarization state of the reflected light. Amplitude ratio and phase difference of the Fresnel reflection coefficients rp and rs are used to investigate material composition, molecule orientation, film thickness and optical constants of single films and layer stacks. Benefits of SENDIRA IR spectroscopic ellipsometer Measures two parameters: amplitude ratio and phase differences Sensitive to mono layers and molecule orientation Easy sample preparation, no reference sample required Combines SE with R and T measurements Large sample analysis, mapping capabilities Measurement principal of FT-IR ellipsometer A(α1) P(α2 ) = ±45° Interferometer Ellipsometer Fourier transformation Interferogram Source Compensator Polarizer Sample Analyzer Detector Single beam spectra Ellipsometric Parameters ?(?), ?(?) IR spectroscopic ellipsometer SENDI