英特尔将推进到10纳米,但在7纳米将告别硅元素.doc

Intel forges ahead to 10nm, will move away from silicon at 7nm 英特尔将推进到10纳米，但在7纳米将告别硅元素 This week at the 2015 International Solid-State Circuits Conference ISSCC , Intel will provide an update on its new 10nm manufacturing process and new research on how its maintaining the march of Moores law to 7nm and beyond. The first chips based on Intels new 10nm process are expected in late 2016/early 2017, and the company says its hoping to avoid the delays that haunted the belabored release of 14nm Broadwell. To hit 7nm, Intel says new materials will be required—as in, it looks like 10nm will finally be the end of the road for silicon. The most likely replacement for silicon is a III-V semiconductor such as indium gallium arsenide InGaAs , though Intel hasnt provided any specific details yet.大意：英特尔将对10纳米进行升级，并继续研究如何跟随摩尔定律将制程推进到7纳米。10纳米制程预计将在2016年或2017年早期到来。为达到7纳米，英特尔将采用新材料，最有可能是元素周期表中III族和V族的化合物----铟镓砷化物。ISSCC 2015, being held in San Francisco this week, is where all the big players in silicon Intel, Samsung, TSMC, IBM, etc. meet to talk about their latest manufacturing processes and how they might go about overcoming the current barriers to smaller, faster, and denser computer chips. Its not unusual for Intel to have one of the largest presences at the conference, and this year is no different: it will be presenting three papers on its 14nm technology, hosting sessions on a variety of topics, and Mark Bohr—one of Intels most esteemed researchers—will be sitting on a panel that discusses Moores law beyond 10nm.大意：略The steady march of new CMOS processes driving ever smaller transistorsOn a conference call last week, Intel gave reporters a preview of what to expect at ISSCC, along with some updates on its upcoming 10nm process and the difficult step down to 7nm. On the call, Intel acknowledged that its Broadwell chips were delayed due to the unforeseen complexity of manufacturing at 14nm, but the company says it hopes to avoid the same delays with 10nm, even t