专业英语2第7讲 英译中.docVIP

专业英语（2） 第7讲 We observe from these curves that at high HF and low HNO3 concentrations, corresponding to the region near the upper vertex, the etch rate is controlled by the HNO3 concentration (i.e., the etch rate is essentially independent of HF concentration for a given CH3COOH diluent. vertex 顶点 diluent 稀释剂 我们从这些曲线观察到：当氢氟酸的浓度高和硝酸浓度低时，所对应的区域靠近上顶点，蚀刻率是由硝酸浓度控制（即对应于给定的醋酸稀释剂，蚀刻率基本上与氢氟酸的浓度无关。） At low HF and high HNO3 concentrations, corresponding to the region near the lower right vertex, the etch rate is controlled by the ability of HF to remove the SiO2 as it is formed; etchant solutions in this region are isotropic, that is not sensitive to crystallographic orientation , and are used as polishing etches. 在HF浓度低硝酸浓度高时，对应右下顶点附近的区域，刻蚀速率由HF消除所形成的二氧化硅的能力决定，在此区域的蚀刻溶液是各向同性的，也就是，对晶体取向不敏感，可用作抛光蚀刻。 In diamond and zincblend lattices, the (111)-plane is more closely packed than the (100)-plane; therefore , the etch rate is expected to be slower for the (111)-plane. 在金刚石和闪锌矿晶格， 111面比100面排列（/堆积）更紧密，由此，111面的蚀刻率也相对较低。 Orientation-dependent etching of100－oriented silicon through a patterned silicon dioxide mask creates precise V-shaped grooves, the edges being (111)-planes at an angle of 54.7 (from the (100)-surface, as shown in the left of Figure 3-4(a). P183 通过图案化二氧化硅掩膜对100面的硅定向蚀刻后得到精确的V形槽，边缘与111面成54.7度角（从100面， 如左图3－4(a)所示） A plasma is produced when an electric field of sufficient magnitude is applied to a gas, causing the gas to break down and become ionized. plasma 等离子体 break down 分解 当足够数量级的电场被施加到气体上，造成气体的分解及电离时，等离子体就这样产生了。 The electron concentrations in the plasma for dry etchings are relatively low, typically on the order of 109 to 1012 cm-3. At a pressure of Torr, the concentrations of gas molecules are 104 to 107 times higher than the electron concentrations. 在干法蚀刻中等离子体的电子浓度相对较低，典型浓度为109至1012立方厘米数量级。 在压力为Torr量级上时，气体分子的浓度比电子浓度高104 到107 倍 However, there is one major drawback of the sputter-etching process: poor selectivity, that is, the etch rates for most materials are ve