Chapt的er 20 Power Diodes.pptVIP

Diodes - * Copyright ? by John Wiley Sons 2003 Diodes for Power Electronic Applications Lecture Notes OUTLINE ? PN junction power diode construction ? Breakdown voltage considerations ? On-state losses ? Switching characteristics ? Schottky diodes ? Modeling diode behavior with PSPICE Basic Structure of Power Semiconductor Diodes Breakdown Voltage Estimate - Step Junction Breakdown Voltage - Punch-Through Step Junction Effect of Space Charge Layer Curvature Control of Space Charge Layer Boundary Contour ? Electrically isolated conductors (field plates) act as equipotential surfaces. ? Correct placement can force depletion layer boundary to have larger radius of curvature and t;hus minimize field crowding. ? Electrically isolated p-regions (guard rings)has depletion regions which interact with depletion region of main pn junction. ? Correct placement of guard rings can result in composite depletion region boundary having large radius of curvature and thus minimize field crowding. Surface Contouring to Minimize Field Crowding ? Large area diodes have depletion layers that contact Si surface. ? Difference in dielectric constant of Si and air causes field crowding at surface. ? Electric fields fringing out into air attract impurities to surface that can lower breakdown voltage. ? Proper contouring of surface can mimimize depletion layer curvature and thus field crowding. ? Use of a passivation layer like SiO2 can also help minimize field crowding and also contain fringing fields and thus prevent attraction of impurities to surface. Conductivity Modulation of Drift Region ? Forward bias injects holes into drift region from P+ layer. Electrons attracted into drift region from N+ layer. So-called double injection. ? If Wd ≤ high level diffusion length La , carrier distributions quite flat with p(x) ≈ n(x) ≈ na. ? For na drift region doping Nd, the resistance of the drift region will be quite small. So-called