功能材料1：绪言解析.ppt

Hot Electrons In Carbon: Graphite Behaves Like Semiconductor Scientists have found that graphite behaves like a semiconductor in ultrafast time scales. The results are of fundamental importance for future electronic devices based on carbon For the first time, the study shows conclusively that, on ultrashort time scales, graphite behaves like a semiconductor, such as silicon or gallium arsenide, and not like a metal. Physical Review Letters Mar. 2009 Breakthrough in Developing Super-Material Graphene Nature Jan. 19, 2010 The graphene sample, approximately 50mm2 , was produced epitaxially -- a process of growing one crystal layer on another -- on silicon carbide. Having such a significant sample not only proves that it can be done in a practical, scalable way, but also allowed the scientists to better understand important properties. Key Milestone Reached on Road to Graphene-Based Electronic Devices A 100mm graphene wafer containing approximately 75,000 devices and test structures. Inset - an optical image of a single chip. Each small square pad on the chip is a mere 100. Penn State Nanofab Feb. 1, 2010 Using a process called silicon sublimation, researchers thermally processed silicon carbide wafers in a physical vapor transport furnace until the silicon migrated away from the surface, leaving behind a layer of carbon that formed into a one- to two-atom-thick film of graphene on the wafer surface. Achieving 100mm graphene wafers has put the Penn State EOC in a leading position for the synthesis of ultra-large graphene and graphene-based devices. Scientists Demonstrate Worlds Fastest Graphene Transistor IBM researchers demonstrated a radio-frequency graphene transistor with the highest cut-off frequency achieved so far for any graphene device -- 100 GigaHertz This accomplishment is a key milestone for the Carbon Electronics for RF Applications program, in an effort to develop next-generation communication devices. The high frequency record was achieved