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Thermal stability of low-resistance Au Ohmic contacts to GeTe.pdf
Thin Solid Films 621 (2017) 145–150
Contents lists available at ScienceDirect
Thin Solid Films
journal homepage: /locate/tsf
Thermal stability of low-resistance Au Ohmic contacts to GeTe
Haila M. Aldosari, Kayla A. Cooley, Shih-Ying Yu, Katherine C. Kragh-Buetow, Suzanne E. Mohney ?
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA
article info
Article history: Received 5 September 2016 Received in revised form 10 November 2016 Accepted 24 November 2016 Available online 28 November 2016
Keywords: Germanium telluride Phase change material Ohmic contact
abstract
Low-resistance Ohmic contacts for phase change materials (PCMs) such as GeTe are required for devices such as radio frequency switches. The contacts must also exhibit good thermal stability since the PCM is switched by heating. In this work, Au Ohmic contacts to GeTe have been examined, including the effect of pre-metallization surface preparation and annealing on the resistance of the contacts. Although some form of pre-metallization surface treatment must be performed after photolithography to produce contacts with low resistance, the contact resistance (Rc) and speci?c contact resistance (ρc) were insensitive to the pre-metallization surface treatment chosen, whether in-situ Ar+ plasma treatment was used, or UV-O3 treatments followed by immersion in deionized H2O, (NH4)2S, or HCl. In all cases, Rc was 0.007 ± 0.001 Ω·mm and ρc was 1.2–1.3 × 10?8 Ω·cm2. Thermal stability was also investigated at 250, 300, and 350 °C for 30 min. The contact resistance increased as annealing temperature increased, and changes in the contacts were observed using ?eld emission scanning electron microscopy, transmission electron microscopy, and energy dispersive spectroscopy. No solid-state reaction occurred between Au and GeTe, even at 350 °C. Rather, the increase in res
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