单相桥式逆变电路 学位论文.doc

电力电子技术课程设计说明书 单相桥式逆变电路的设计 院 、 部 学生姓名： 指导教师： 职称 专 业： 班 级： 学 号： 完成时间： 摘 要 随着电力电子技术的高速发展，逆变电路的应用非常广泛，蓄电池、干电池、太阳能电池等都是直流电源，当我们使用这些电源向交流负载供电时，就需要用到逆变电路了。本次基于MOSFET的单相桥式无源逆变电路的课程设计，主要涉及IGBT的工作原理、全桥的工作特性和无源逆变的性能。本次所设计的单相全桥逆变电路采用IGBT作为开关器件，将直流电压Ud 逆变为波形电压，并将它加到纯电阻负载两端。 首先分析了单项桥式逆变电路的设计要求。确定了单项桥式逆变电路的总体方案，对主电路、保护电路、驱动电路等单元电路进行了设计和参数的计算，其中保护电路有过电压、过电流、电压上升率、电流上升率等，选择和校验了IGBT、SG3525等元器件，IGBT是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件, 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。最后利用MATLAB仿真软件建立了SIMULINK仿真模型，并进行了波形仿真，仿真的结果证明了完成设计任务要求，满足设计的技术参数要求。 关键词：单相；逆变；设计 ABSTRACT With the rapid development of power electronics technology, the inverter circuit is widely used, batteries, dry batteries, solar cells are DC power supply, when we use these power supply power to the AC load, you need to use the inverter circuit. This time based on MOSFET single phase bridge inverter circuit design, mainly related to the work principle of IGBT, the full bridge of the working characteristics and the performance of passive inverter. The single-phase full bridge inverter circuit designed by IGBT as the switching device, the DC voltage Ud inverter as the waveform voltage, and will be added to the pure resistance load at both ends. Firstly, the design requirements of the single bridge inverter circuit are analyzed. To determine the overall scheme of single bridge inverter circuit, of the main circuit, protection circuit, driving circuit unit circuit design and parameter calculation, the protection circuit have voltage, current and voltage rate of rise, the current rate of rise, selection and validation of the IGBT and SG3525 components, IGBT is by BJT (bipolar transistor) and MOS (insulated gate field effect transistor) composed of full control type voltage driven type power semiconductor devices, bo