半导体器件物理chapter2-p-njunctins打印版讲义.pdf

?2011/10/9 ?1 p-n Junctions Chapter 2 UESTC-Physics of Semiconductor Devices 12011/10/9 Z. H. Li 1. Introduction 2. Depletion Region 3. Current-Voltage Characteristics CONTENT UESTC-Physics of Semiconductor Devices 22011/10/9 4. Junction Breakdown 5. Transient Behavior and Noise 6. Terminal Functions §2-1 Introduction UESTC-Physics of Semiconductor Devices 32011/10/9 ENIAC（1946） Electronic Numerical Integrator And Calculation ? 长30.48米，宽1米，占地面积约63平方米，30个操作台，约相当于10 间普通房间的大小，重达30吨，耗电量150千瓦，造价48万美元。 UESTC-Physics of Semiconductor Devices 42011/10/9 ? 包含了17,468 真空管，7,200水晶 二极管, 1,500 中转, 70,000 电阻器, 10,000 电容器，1500继电器， 6000多个开关，每秒执行5000次 加法或400次乘法，是继电器计算 机的1000倍、手工计算的20万倍。 UESTC-Physics of Semiconductor Devices 52011/10/9 Ideal Diode The ideal diode may be considered the most fundamental nonlinear circuit element UESTC-Physics of Semiconductor Devices 62011/10/9 ?2011/10/9 ?2 BASIC DEVICE TECHNOLOGY ? Alloy method ? Solid-state diffusion method UESTC-Physics of Semiconductor Devices 72011/10/9 ? Ion implantation method ? Epitaxy method UESTC-Physics of Semiconductor Devices 82011/10/9 Thermal Equilibrium Condition P N Hole UESTC-Physics of Semiconductor Devices 92011/10/9 vE Silicon (p-type) Silicon (n-type) cE iEfE cE fE iE vE Thermal Equilibrium Condition UESTC-Physics of Semiconductor Devices 102011/10/9 (a)Abrupt junction (b)Linear graded junction UESTC-Physics of Semiconductor Devices 112011/10/9 §2-2 Depletion Region UESTC-Physics of Semiconductor Devices 122011/10/9 ?2011/10/9 ?3 §2-2-1 Abrupt Junction UESTC-Physics of Semiconductor Devices 132011/10/9 1. Built-in Potential UESTC-Physics of Semiconductor Devices 142011/10/9 Thermal equilibrium condition: Fermi level must be constant throughout the sample 1. Built-in Potential UESTC-Physics of Semiconductor Devices 152011/10/9 Built-in potential or Diffusion potential: For nondegenerate semiconductors: 1. Built-in Potential UESTC-Physics of Semiconductor Devices 162011/10/9 At equilibrium: Built-in voltage