MOS管 8N60.pdfVIP

UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET .tw 1 of 8 Copyright ? 2007 Unisonic Technologies Co., Ltd QW-R502-115,B 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 1.2? @VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number: 8N60L ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 8N60-x-TA3-T 8N60L-x-TA3-T TO-220 G D S Tube 8N60-x-TF3-T 8N60L-x-TF3-T TO-220F G D S Tube 8N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 8 .tw QW-R502-115,B ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 8N60-A 600 V Drain-Source Voltage 8N60-B VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 7.5 A TC = 25°C 7.5 A Continuous Drain Current TC = 100°C ID 4.6 A Pulsed Drain Current (Note 1) IDM 30 A Single Pulsed (Note 2) EAS 230 mJ Avalanche Energy Repetitive (Note 1) EAR 14.7 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 147 W Power Dissipation TO-220F PD 48 W Jun