Excess silicon at the silicon nitride thermal oxide interface in oxide.pdf

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Excess silicon at the silicon nitride thermal oxide interface in oxide.pdf

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Excess silicon at the silicon nitride thermal oxide interface in oxide

Excess silicon at the silicon nitride/thermal oxide interface in oxide–nitride–oxide structures V. A. Gritsenko, Hei Wong, J. B. Xu, R. M. Kwok, I. P. Petrenko et al. Citation: J. Appl. Phys. 86, 3234 (1999); doi: 10.1063/1.371195 View online: /10.1063/1.371195 View Table of Contents: /resource/1/JAPIAU/v86/i6 Published by the American Institute of Physics. Related Articles Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping Appl. Phys. Lett. 101, 152103 (2012) Defect compensation in LaAlO3 perovskite-based high dielectric constant oxides J. Appl. Phys. 112, 034108 (2012) Direct measurement of surface states density and energy distribution in individual InAs nanowires Appl. Phys. Lett. 100, 262105 (2012) A theoretical rationalization of a total inelastic electron tunneling spectrum: The comparative cases of formate and benzoate on Cu(111) J. Chem. Phys. 136, 244507 (2012) The roles of ruthenium nanoparticles decorated on thin multi-walled carbon nanotubes in the enhancement of field emission properties Appl. Phys. Lett. 100, 023102 (2012) Additional information on J. Appl. Phys. Journal Homepage: / Journal Information: /about/about_the_journal Top downloads: /features/most_downloaded Information for Authors: /authors Downloaded 24 Oct 2012 to 1. Redistribution subject to AIP license or copyright; see /about/rights_and_permissions JOURNAL OF APPLIED PHYSICS VOLUME 86, NUMBER 6 15 SEPTEMBER 1999Excess silicon at the silicon nitride/thermal oxide interface in oxide–nitride–oxide structures V. A. Gritsenko a) Institute of Semiconductor Physics, Novosibirsk 630090, Russia Hei Wong Department of Electronic Engineering, Cityu, 83 Tat Chee Avenue, Kowloon, Hong Kong J. B. Xu and R. M. Kwok Chinese University of Hong Kong, Shatin, Hong Kong I. P. Petrenko and B. A. Zaitsev Institute of Semiconductor Physics, Novosibirsk 630090, Russia Yu. N. Morokov Institute of Computational Technologies, Novosibirsk 630090, Russia Yu. N. Novi