采用ECR-PEMOCVD方法进行立方和六方GaN单晶薄膜生长的准热力学模型和相图.pdfVIP

第 卷第 期 半 导 体 学 报 25 9 Vol. 25, No. 9 年 月 2004 9 C~INESE JOURNAL OF SEMICONDUCTORS Sep. , 2004 ================================================================= Thermodynamic Modeling and phase Diagrams of Hexagonal and Cubic gaN Single-Crystal Film groWth by ECR-pEM0 CVD Methode Wang Sansheng1 and Gu Biao2 ( 1 Depa1tment of Physzcs, Tszngh~a Unzue1szty, Bezjzng 100084, Chzna) ( 2 Natzonal key a}o1ato1y of Mate1zal Modzfzcatzon }y ene1getzc Beams, Dalzan Unzue1szty of Technology, Dalzan 116024, Chzna) bstract Based on thermodynamic eguilibrium theory, a chemical eguilibrium model for GaN groWth is given in electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition ( ECR-PEMOCVD) system. Calculation indicates that the groWth driving force are functions of groWth conditions group I input partial pressure, input V / I ratio, and groWth temperature. Furthermore, the groWth phase diagrams of hexagonal and cubic GaN film groWth are obtained, Which are consistent With our experimental conditions to some extent. Through analysis, it is explained the reason that high temperature and high input V / I ratio are favorable for hexagonal GaN film groWth. This model can be extended to the similar systems used for GaN single-crystal film groWth. Key Words GaN ECR-PEMOCVD thermodynamic analysis groWth phase diagram EE CC 8130D C C number TN304 054 Document code A