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Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights英文文献资料.docVIP

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Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights英文文献资料.doc

    Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights英文文献资料

    HindawiPublishingCorporation JournalofNanomaterials Volume2012,ArticleID346915,6pages doi:10.1155/2012/346915 ResearchArticle CharacteristicsofInGaN-BasedLight-EmittingDiodeson PatternedSapphireSubstrateswithVariousPatternHeights Sheng-FuYu, 1 Sheng-PoChang, Shoou-JinnChang, Ray-MingLin, 1 1 2 andWen-ChingHsu 3 Hsin-HungWu, 2 1 DepartmentofElectricalEngineering,InstituteofMicroelectronics,AdvancedOptoelectronicTechnologyCenter, CenterforMicro/NanoScienceandTechnology,NationalChengKungUniversity,Tainan70101,Taiwan DepartmentofElectronicEngineering,GreenTechno

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