Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon 英文参考文献.docVIP

Sensors 2010, 10, 1012-1020; doi:10.3390/s100201012 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon Seyedeh Maryam Banihashemian 4 1 , Hassan Hajghassem and Seyed Mohamadhosein Mosakazemi 5 *, Alireza Erfanian , 2, 3 Majidreza Aliahmadi , Mansor Mohtashamifar 4 1 Department of Physics, Islamic Azad University, Qom Branch, Qom, Iran; E-Mail: banihashemian_physics@ Electrical Engineering Department, Shahid Beheshti University, Tehran, Iran 2 3 4 Electrical Engineering Department, K.N. Toosi University, Tehran, Iran; E-Mail: erfanian@icee.ac.ir Electronic Research Center, Tehran, Iran; E-Mails: mr_aliahmadi@ (M.A.); TAH1965_MOH@ (M.M.) 5 Qom Payame Noor University, Iran; E-Mail: mh_moosakazemi@pnu.ac.ir * Author to whom correspondence should be addressed; E-Mail: h_hajghassem@sbu.ac.ir; Tel.: +98-21-220-19991; Fax: +98-21-228-16048. Received: 19 November 2009; in revised form: 29 December 2009 / Accepted: 18 January 2010 / Published: 27 January 2010 Abstract: Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 ? of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM). Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR) and the number of peaks in I-V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it