整流桥——sizb60.doc

SHINDENGEN General Purpose Rectifiers DIL Bridges OUTLINE DIMENSIONS S1ZB60 Case : 1Z Unit : mm 600V 0.5A FEATURES Small DIL Package Highreliabilitywithsuperior moistureresistance ApplicabletoAutomaticInsertion APPLICATION Switching power supply Home Appliances, Office Equipment Telecommunication, Factory Automation ?Absolute MaItxeimmum Ratings (If nSoytmsbpoelcified Tl=25?) Conditions Ratings Unit RATINGS Storage Temperature Tstg -40`150 ? Operating Junction Temperature Tj 150 ? Maximum Reverse Voltage VRM 600 V Average Rectified Forward Current IO 50Hz sine wave, R-load On glass-epoxy substrate Ta=25? 0.5 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25? 30 A Current Squared Time I t 1ms?t?10ms Tj=25? 4.5 A s ?Electrical ChItaermacteristics (If noStysmpebcoilfied Tl=25?) Conditions Ratings Unit Forward Voltage VF IF=0.4A, Pulse measurement, Rating of per diode Max.1.05 V Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Max.10 КA Thermal Resistance ЖЖjjal junctiion ttoo laemabdient On glass-epoxy substrate MMaaxx..12304 ?/W Copyright Copy;2001 Shindengen Electric Mfg.Co.Ltd  S1ZBx Forward Voltage 10 1 Tl=150°C [TYP] Tl=25°C [TYP] Pulse measurement per diode 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage VF [V]  S1ZBx Forward Power Dissipation 3 SIN 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 Average Rectified Forward Current IO [A] Tj = 150°C Sine wave  S1ZBx Derating Curve PCB SIN Glass-epoxy substrate Soldering land 6mm Ч 2mm Conductor layer 35μm 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] Sine wave R-load Free in air  S1ZBx Peak Surge Forward Capability 40 10ms 10ms 35 1 cycle 30 non-repetitive, sine wave, Tj=25°C before surge current is applied 25 20 15 10 5 0 1 2 5 10 20 50 100 Number of Cycles [cycles]