第二讲 电力电子器件.ppt

Physics of MOSFET operation (On-state) p-n- junction is slightly reverse biased positive gate voltage induces conducting channel drain current flows through n- region an conducting channel on resistance = total resistances of n- region,conducting channel,source and drain contacts, etc. Static characteristics of power MOSFET Switching characteristics of power MOSFET Turn- on transient Turn- off transient –Turn- on delay time td(on) –Turn- off delay time td(off) –Rise time tr –Falling time tf Examples of commercial power MOSFET 1.4.4 Insulated- gate bipolar transistor—IGBT Combination of MOSFET and GTR Features On- state losses are much smaller than those of a power MOSFET, and are comparable with those of a GTR Easy to drive —similar to power MOSFET Faster than GTR, but slower than power MOSFET Structure and operation principle of IGBT Also multiple cell structure Basic structure similar to power MOSFET, except extra p region On- state: minority carriers are injected into drift region, leading to conductivity modulation compared with power MOSFET: slower switching times, lower on- resistance, useful at higher voltages (up to 1700V) Structure of MOSFET Equivalent circuit and circuit symbol of IGBT Switching characteristics of IGBT Examples of commercial IGBT 1.5 Other new power electronic devices Static induction transistor —SIT Static induction thyristor —SITH MOS controlled thyristor —MCT Integrated gate- commutated thyristor —IGCT Power integrated circuit and power module Static induction transistor—SIT Another name: power junction field effect transistor—power JFET Features –Major- carrier device –Fast switching, comparable to power MOSFET –Higher power- handling capability than power MOSFET –Higher conduction losses than power MOSFET –Normally- on device, not convenient (could be made normally- off, but with even higher on-state losses) 2) Static induction t