利用乾式蚀刻技术制作菱形全包覆式锗锗矽奈米线.PDF

/ NANO COMMUNICATION 23 No. 1 37 / Diamond-shaped Ge and Ge0.9Si0.1 Gate- All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology 1 2 1 1 3 2 1 2 3 (Diamond-shaped) (gate-all-around) / (Cl2) (HBr) / (Isotropic/Anisotropic) {111} {111} n p p [1] 2015 (IEDM) Abstract We propose a feasible pathway to scale the Ge MOSFET technology by using a novel diamond- shaped Ge and Ge0.9 Si0.1 gate-all-around (GAA) nanowire (NW) FETs with four {111} facets. The device fabrication requires only simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The proposed dry etching process involves three isotropic/ anisotropic etching steps with different Cl2/HBr ratios for forming the suspended diamond- shaped channel. Taking advantages of the GAA configuration, favorable carrier mobility of the {111} surface, nearly defect-free suspended channel, and improved dopant activation by incorporating Si, nFET and pFET with excellent performance have been demonstrated, including an Ion/Ioff ratio exceeding