双极型晶体管（Bipolar transistor）.docVIP

双极型晶体管（Bipolar transistor） The easy way to do that is to judge their potential changes. In the case of NPN silicon tube, the PNP tube is the exact opposite. (1) up to, Ube 0.7v, which is the launch knot anti-bias, Ube 0 is reliable. (2) amplification, Ube 0.7 V, Uce Ube, Ubc 0, which is the launch knot is biased, and the collector is invert. (3) saturation, Ube 0.7 V, Uce Ube, Ubc 0, which is the launch junction, and the collector junction is also biased. This is a time of saturation, how Ib changes, and the Ic doesnt change. Excuse me, can you tell me how you judge? NPN and PNP what happens when saturation is closed? Isnt there a 0.7 pressure difference? The transistor emitter junction is a PN junction, and its input characteristic curve is similar to that of the diode. When Ube dead zone voltage, the transistor is in the cutoff state; When dead zone voltage, Ib only increases with Ube. Silicon tube: the dead zone voltage is 0.5 V, and the voltage drop of the transmitting junction is 0.6-0.7 V. Germanium tube: the dead zone voltage is 0.2v and the transmitter junction voltage drop is 0.2-0.3 V. The emitter junction of the transistor is in reverse bias, and the collector junction is in reverse bias. At this point, the relationship between the three pole voltage is Vc Ve Vb, the base current Ib = 0, the transistor has no amplification effect, the collector current is only the backward current, Ic = Iceo, approximately zero, like a disconnected switch. Iceo is an important parameter for transistors, called penetrating current. As Ube increases, the tube is put into the large area and only the transistors that work in the region have a current amplification. At this point, the emitter junction of the transistor is in a forward bias, while the collector junction is in reverse bias, and the triple-pole voltage Vc Vb Ve. In this area, there is no such thing as no When Ube tends to 0.7 V, both the emitter junction of the transistor and the collector junction