脉冲激光烧蚀制备窄发光带的分散Si 纳米颗粒 - 中国有色金属学报.PDF

20 4 2010 4 Vol.20 No.4 The Chinese Journal of Nonferrous Metals Apr. 2010 1004-0609(2010)04-0724-06 1 2 1 1 1 (1. 100088 2. 100088) KrF Si 200 K (HOPG) Si(100)Si (Raman)(HRTEM)Si Si 585 nm70 nm Si Si Si O 484.4 TB 383 A Dispersed Si nanoparticles with narrow photoluminescence peak prepared by laser ablated deposition 1 2 1 1 1 WANG Lei , TU Hai-ling , ZHU Shi-wei , CHEN Xin , DU Jun (1. Institute of Advanced Electronic Materials, General Research Institute for Nonferrous Metals, Beijing 100088, China; 2. National Engineering Research Center for Powder, General Research Institute for Nonferrous Metals, Beijing 100088, China) Abstract: The dispersed single crystalline Si nanoparticles were synthesized by KrF excimer laser ablation on HOPG and single crystalline Si(100) substrate cooled by liquid nitrogen to 200 K, respectively. The Raman and HRTEM analysis of the nanoparticles deposited on the HOPG substrate indicate that the Si nanoparticles are crystalline. The results show that the nanoparticles on the Si substrate have a mosaic structure with uniform size. The corresponding photoluminescence (PL) peak wavelength is 589 nm with full width at half maximum of 70 nm, which is blue-shifted and narrower than that obtained at room temperature substrates. The narrow PL spectrum result is attributed to the uniform size of Si nanoparticles. Key words: Si nanoparticles; narrow photoluminescence peak; pulsed laser ablation; size distribution; photoluminescence (PL) 20 90 [6] [1−2] Si