NiO插层和基片温度对超薄坡莫合金薄膜各向异性磁电阻的影响 Effects of NiO layer and substrate temperature on the anisotropy magnetoresistance of ultrathin permalloy films.pdfVIP

研究·分析· 实验 NiO 插层和基片温度对超薄坡莫合金薄膜 各向异性磁电阻的影响 张 慧，王书运，高垣梅，王存涛 （山东师范大学 物理与电子科学学院，山东济南 250014 ） 摘 要：利用多靶磁控溅射系统在康宁玻璃基片上制备了 Ta(4nm)/NiO(t)/Ni81Fe19(20nm)/NiO(t)/Ta(3nm) 系 列坡莫合金薄膜样品，研究了 NiO 插层厚度、基片温度对其各向异性磁电阻和微结构的影响。利用四探针技术 测量薄膜样品的各向异性磁电阻比(AMR) ，利用X 射线衍射仪（XRD ）分析样品的相结构，用原子力显微镜（AFM ） 分析样品的表面形貌。结果表明，由于 NiO 插层的“镜面反射”作用，选择适当厚度的 NiO 插层能够大幅度提高 坡莫合金薄膜各向异性磁电阻比和磁场灵敏度。对于厚度为 20nm 的Ni81Fe19 薄膜，当基片温度为 450 时，通℃ 过插入 4nm 厚的 NiO 插层可使 AMR 值达到 5.01%，比无NiO 插层时提高了 40%。 关键词：坡莫合金薄膜；各向异性磁电阻；NiO 插层；基片温度 中图分类号：O484.4+3 文献标识码：A 文章编号：1001-3830(2013)06-0001-04 Effects of NiO layer and substrate temperature on the anisotropy magnetoresistance of ultrathin permalloy films ZHANG Hui , WANG Shu-yun, GAO Yuan-mei, WANG Cun-tao College of Physics and Electronics, Shandong Normal University, Ji’nan 250014, China Abstract: A series of Ta(4nm)/NiO(t)/Ni81Fe19(20nm)/NiO(t)/Ta(3nm) ultrathin films were prepared using direct current magnetron sputtering system under appropriate conditions. Influence of NiO layer and substrate temperature on AMR of the samples are investigated. AMR value of Ni Fe films are measured by four-point probe technology, the 81 19 phase composition was characterized by X-ray diffraction, and surface topography of Ni81Fe19 films was observed by AFM. The experiment result shows that NiO layer with appropriate thickness could