tudy+on+Preparation+and+Gas+Sensitivity+of+(Sn1-x,Co2x)O2+Nano-particles.pdfVIP

(Sn1-x ,Co2x)O2 纳米粒子的制备及气敏性能研究 彭同江，孙红娟，刘海峰，樊亮 （西南科技大学矿物材料与应用研究所彭同江，四川 绵阳621010） 摘 要：采用分析纯 SnCl 5H O 和 NH H O 为主要原料，控制不同 Co2+/Sn4+ 摩尔比，利用均匀共沉淀法制备了 4 2 3 2 (Sn1-x ,Co2x)O2 纳米粉体样品，并以白云母为基片利用厚膜工艺制得气敏元件。对样品的结构、结晶性能和活性等分析发 现，Co2+ 以类质同像的 式代替了SnO2 晶格中的Sn4+ ，并引起了M-O 键长、晶胞参数和M-O 八面体电价平衡的非均一 性，进而提高了粉体活性及n 型半导体性能。75± 时在不同浓度H2 中元件气敏性能测试表明，Co2+ 的引入提高了SnO2 的H 灵敏度。元件的灵敏度与H 浓度之间具有较好的线性关系。实验得到了制备(Sn ,Co )O 气敏材料的最佳Co2+/Sn4+ 2 2 1-x 2x 2 摩尔比。 关键词：SnO ；气敏；掺杂；均匀共沉淀法 2 中图分类号：TN304.92 文献标识码：A Study on Preparation and Gas Sensitivity of (Sn1-x ,Co2x)O2 Nano-particles PEN G Tong-ji ang, SUN Hong-j uan, LI U Hai-f eng, FAN L iang, (Academic Institution of Mineral Material App lication, Southwest University of Science Technology, Miany ang Sichuan, 621010) Abstract: Using analytically pure SnCl 5H O (AP) and NH H O (AP) as main raw materials, (Sn ,Co )O nano-particles 4 2 3 2 1-x 2x 2 were prepared by homogenous co-precipitation method with different molar rates of Co2+/Sn4+ . The gas sensors were made by thick film technique with pure or doped SnO2 layers on mica-substrates. Through analyzing the structure, crystalline property and activity of Co Sn O , Sn4+ in the crystal lattice of SnO is partly replaced by Co2+, which results in change of the M-O bond 2x 1-x 2 2 lengths, lattice parameters and asymmetry of electrovalent balance of M-O octahedrons. It improves the activity and n-type semiconductor prope