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effect of gacu ratio on polycrystalline thin film solar cellgacu比率对多晶薄膜太阳能电池的影响
Hindawi Publishing Corporation
Advances in OptoElectronics
Volume 2011, Article ID 573094, 6 pages
doi:10.1155/2011/573094
Research Article
Effect of Ga/Cu Ratio on Polycrystalline CuGaSe2 Thin
Film Solar Cell
M. M. Islam,1, 2 A. Yamada,3 T. Sakurai,1 S. Ishizuka,3 K. Matsubara,3
S. Niki,3 and K. Akimoto1
1 Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
2 Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-Ku,
Tokyo 153-8904, Japan
3 Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba,
Ibaraki 305-8568, Japan
Correspondence should be addressed to M. M. Islam, monirul@mbe.rcast.u-tokyo.ac.jp
Received 30 April 2011; Accepted 1 June 2011
Academic Editor: Surya Prakash Singh
Copyright © 2011 M. M. Islam et al. This is an open access article distributed under the Creative Commons Attribution License,
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Structural and electrical properties of polycrystalline CuGaSe2 thin films have been studied by changing the Ga/Cu ratio in the
films. CuGaSe2 thin films with various Ga/Cu ratio were grown over Mo-coated soda-lime glass substrates. With the increase of
Ga content in CuGaSe2 , morphology of the films was found to deteriorate which is associated with the smaller grain size and the
appearance of impurity phases presumably due to the phase transition from the chalcopyrite structure to the defect-related phase
on the surface of the films. Properties of the Ga poor films were affected by the Cu rich secondary phases. Electrical properties of
the films were strongly i
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