fabrication and optoelectrical properties of izo heterostructure solar cells by thermal oxidation制造和optoelectrical属性izo异质结构太阳能电池的热氧化.pdfVIP

Hindawi Publishing Corporation Advances in Condensed Matter Physics Volume 2012, Article ID 129139, 5 pages doi:10.1155/2012/129139 Research Article Fabrication and Optoelectrical Properties of IZO/Cu2O Heterostructure Solar Cells by Thermal Oxidation Cheng-Chiang Chen, Lung-Chien Chen, and Yi-Hsuan Lee Department of Electro-optical Engineering, National Taipei University of Technology, 1, Section 3, Chung-Hsiao E. Road, Taipei 106, Taiwan Correspondence should be addressed to Lung-Chien Chen, ocean@.tw Received 14 March 2012; Accepted 30 March 2012 Academic Editor: Nigel Wilding Copyright © 2012 Cheng-Chiang Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Indium zinc oxide (IZO)/cupper oxide (Cu2 O) is a nontoxic nature and an attractive all-oxide candidate for low-cost photovoltaic (PV) applications. The present paper reports on the fabrication of IZO/Cu O heterostructure solar cells which the Cu O layers 2 2 were prepared by oxidation of Cu thin films deposited on glass substrate. The measured parameters of cells were the short-circuit current (Isc ), the open-circuit voltage (Voc ), the maximum output power (Pm ), the fill factor (FF), and the efficiency (η), which had values of 0.11 mA, 0.136 V, 5.05 μW, 0.338, and 0.56%, respectively, under AM 1.5 illumination. 1. Introduction reported ZnO/Cu2 O solar cells prepared [21, 22]. The