effect of temperature supply voltage variation on stability of 9t sram cell at 45 nm technology for various process corners温度和电源电压变化对稳定性的影响9 sram t细胞在45纳米技术对各种过程的角落.pdfVIP

Circuits and Systems, 2012, 3, 200-204 /10.4236/cs.2012.32027 Published Online April 2012 (http://www.SciRP.org/journal/cs) Effect of Temperature Supply Voltage Variation on Stability of 9T SRAM Cell at 45 nm Technology for Various Process Corners 1 2 3 Manisha Pattanaik , Shilpi Birla , Rakesh Kumar Singh 1VLSI Group, Atal Bihari Vajpayee Indian Institute of Information Technology and Management, Gwalior, India 2Department of Electronics Communications, Sir Padampat Singhania University, Udaipur, India 3Department of Electronics Communications, Bipin Chandra Tripathi kumaon Engineering College, Dwarahat, India Email: shilpibirla@ Received February 8, 2012; revised March 7, 2012; accepted March 17, 2012 ABSTRACT Due to the continuous rising demand of handheld devices like iPods, mobile, tablets; specific applications like bio- medical applications like pacemakers, hearing aid machines and space applications which require stable digital systems with low power consumptions are required. As a main part in digital system the SRAM (Static Random Access Memory) should have low power consumption and stability. As we are continuously moving towards scaling for the last two decades the effect of this is process variations which have severe effect on stability, performance. Reducing the supply voltage to sub-threshold region, which helps in reducing the power consumption to an extent but side by side it raises the issue of the stability of the memory. Static Noise Margin of SRAM cell enforces great challenges to the sub thresh- old SRAM design. In this paper we have analyzed the ce